The Focused Ion Beam (FIB) system uses a finely focused beam of gallium ions to raster over the surface of a sample. The Ga+ beam sputters sputters a small amount of surface material which leaves the surface as either secondary ions or neutral atoms. Secondary electrons are emitted. The primary beam also produces secondary electrons. Sputtered ions and secondary electrons can be used to form an image of the the sample. For TEM sample preparation, the FIB is used to mill samples surfaces and cross section materials.
1500XB Series CrossBeam® workstations
with outstanding imaging capabilities of the GEMINI field emission column and high performance focused ion beam. The ultimate tool combining FIB and SEM for
materials and semiconductor applications. Carl Zeiss SMT
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